About: Theoretical and Experimental Investigation of SiC Thin Films Surface

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formati This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formati (en)
Title	Theoretical and Experimental Investigation of SiC Thin Films Surface Theoretical and Experimental Investigation of SiC Thin Films Surface (en)
skos:prefLabel	Theoretical and Experimental Investigation of SiC Thin Films Surface Theoretical and Experimental Investigation of SiC Thin Films Surface (en)
skos:notation	RIV/00216305:26220/12:PU100610!RIV13-GA0-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0072), P(GAP102/10/2013), P(LH11060)
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	174185
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PU100610
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon carbide, sublimation, atomic force microscopy (en)
http://linked.open.../riv/klicoveSlovo	silicon carbide atomic force microscopy sublimation
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[929B86B55CB1]
http://linked.open...i/riv/nazevZdroje	ElectroScope - http://www.electroscope.zcu.cz
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of local electronic and optical characteristics of solar cells Centre of sensor, information and communication systems Fluctuation processes in PN junctions of solar cells
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	2012
http://linked.open...iv/tvurceVysledku	Tománek, Pavel Bilalov, Bilal Dallaeva, Dinara
issn	1802-4564
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Theoretical and Experimental Investigation of SiC Thin Films Surface

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