About: Peculiarities of the obtaining process of silicon carbide and aluminum nitride

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure. Obtaining of solid solutions of SiC-AlN system with predictable composition and with expected physical-chemical properties is only possible on the basis of whole and detail investigation of interaction character between components of solid solution and by study of connection between composition and properties. The objects of this study are samples of thin films of aluminum nitride and its solid solutions formatted on silicon carbide substrates by sublimation of source of polycrystalline (SiC)1-x(AlN)x solid solution (x = 0.25 and x=1) at 2100-2300 K in nitrogen atmosphere and at atmosphere pressure. (en)
Title	Peculiarities of the obtaining process of silicon carbide and aluminum nitride Peculiarities of the obtaining process of silicon carbide and aluminum nitride (en)
skos:prefLabel	Peculiarities of the obtaining process of silicon carbide and aluminum nitride Peculiarities of the obtaining process of silicon carbide and aluminum nitride (en)
skos:notation	RIV/00216305:26220/11:PU97098!RIV12-MSM-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP102/11/0995), P(LH11060)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	219801
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU97098
http://linked.open...riv/jazykVysledku	rus - ruština
http://linked.open.../riv/klicovaSlova	sublimation, solid solution, thin layer, target (en)
http://linked.open.../riv/klicoveSlovo	target thin layer solid solution sublimation
http://linked.open...ontrolniKodProRIV	[5442DB43D154]
http://linked.open...v/mistoKonaniAkce	Almaty
http://linked.open...i/riv/mistoVydani	Kursk
http://linked.open...i/riv/nazevZdroje	Proceedings of Internationalscientific conference: Advanced technologies, equipment and analytical systems for material sciences and nanomaterials
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of local electronic and optical characteristics of solar cells Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Bilalov, Bilal Dallaeva, Dinara Abdurazakov, Abdula Arkhipov, Alexandr Kardashova, Gulnara
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2011-06-09 (xsd:date)
number of pages	3 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Southwest state university
https://schema.org/isbn	978-5-7681-0642-3
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Peculiarities of the obtaining process of silicon carbide and aluminum nitride Peculiarities of the obtaining process of silicon carbide and aluminum nitride

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