About: Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interface irregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current density. Capacito An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interface irregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current density. Capacito (en)
Title	Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability (en)
skos:prefLabel	Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability (en)
skos:notation	RIV/00216305:26220/10:PU87769!RIV11-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Sita, Zdeněk Sedláková, Vlasta Šikula, Josef
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	291811
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU87769
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Niobium Oxide Capacitors. (en)
http://linked.open.../riv/klicoveSlovo	Niobium Oxide Capacitors.
http://linked.open...ontrolniKodProRIV	[3DDDD974C50F]
http://linked.open...v/mistoKonaniAkce	Albuquerque, New Mexico
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	Carts Europe 2007
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Sedláková, Vlasta Šikula, Josef Sita, Zdeněk
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2007-03-26 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	10 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Neuveden
https://schema.org/isbn	0-7908-0117-5
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability

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