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Description
  • Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
  • Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique. (en)
Title
  • Detection and localization of defects in monocrystalline silicon solar cell
  • Detection and localization of defects in monocrystalline silicon solar cell (en)
skos:prefLabel
  • Detection and localization of defects in monocrystalline silicon solar cell
  • Detection and localization of defects in monocrystalline silicon solar cell (en)
skos:notation
  • RIV/00216305:26220/10:PU83905!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/08/1474), Z(MSM0021630503)
http://linked.open...iv/cisloPeriodika
  • 805325
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 253628
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/10:PU83905
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Defect, optoelectronic device, solar cells, near-field (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [105A6C1DC582]
http://linked.open...i/riv/nazevZdroje
  • Advances in Optical Technologies
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 2010
http://linked.open...iv/tvurceVysledku
  • Grmela, Lubomír
  • Macků, Robert
  • Tománek, Pavel
  • Škarvada, Pavel
http://linked.open...n/vavai/riv/zamer
issn
  • 1687-6393
number of pages
http://localhost/t...ganizacniJednotka
  • 26220
is http://linked.open...avai/riv/vysledek of
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