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  • This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.
  • This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work. (en)
Title
  • Near-field photoelectric measurement of Si solar cells
  • Near-field photoelectric measurement of Si solar cells (en)
skos:prefLabel
  • Near-field photoelectric measurement of Si solar cells
  • Near-field photoelectric measurement of Si solar cells (en)
skos:notation
  • RIV/00216305:26220/09:PU82379!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/08/1474), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 328808
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/09:PU82379
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Scanning Near-field Optical Microscope, Silicon Solar Cell, Photoelectric Properties (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [C7D3D57EFB97]
http://linked.open...v/mistoKonaniAkce
  • Hamburg
http://linked.open...i/riv/mistoVydani
  • Hamburg, Germany
http://linked.open...i/riv/nazevZdroje
  • 24th European Photovoltaic Solar Energy Conference Proceedings
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Macků, Robert
  • Tománek, Pavel
  • Škarvada, Pavel
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Neuveden
https://schema.org/isbn
  • 3-936338-25-6
http://localhost/t...ganizacniJednotka
  • 26220
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