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  • The threshold voltage of a MOSFET can be shifted by biasing the substrate. This is known as 'body effect.' The contribution deals with TCAD simulation of this effect. The method to extract the threshold voltage shift due to body effect is described. Ten different NMOSFET device simulations generate ten transfer characteristics (curves of drain current vs. gate-source voltage) in order to illustrate threshold voltage shifts for defined substrate and drain voltages. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS. TECPLOT and INSPECT are used to visualize the simulated structure and the simulated curves.
  • The threshold voltage of a MOSFET can be shifted by biasing the substrate. This is known as 'body effect.' The contribution deals with TCAD simulation of this effect. The method to extract the threshold voltage shift due to body effect is described. Ten different NMOSFET device simulations generate ten transfer characteristics (curves of drain current vs. gate-source voltage) in order to illustrate threshold voltage shifts for defined substrate and drain voltages. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS. TECPLOT and INSPECT are used to visualize the simulated structure and the simulated curves. (en)
  • popis (cs)
Title
  • BODY EFFECT SIMULATION BODY EFFECT SIMULATION
  • BODY EFFECT SIMULATION BODY EFFECT SIMULATION (en)
  • Simulace body efektu (cs)
skos:prefLabel
  • BODY EFFECT SIMULATION BODY EFFECT SIMULATION
  • BODY EFFECT SIMULATION BODY EFFECT SIMULATION (en)
  • Simulace body efektu (cs)
skos:notation
  • RIV/00216305:26220/08:PU78838!RIV09-MSM-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 358314
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/08:PU78838
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization. 2D, Threshold voltage, Body effect. (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [92E268C366CA]
http://linked.open...v/mistoKonaniAkce
  • Brno
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • Proceedings of Electronic Devices and Systems EDS`08 IMAPS CS International Conference 2008
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Recman, Milan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Ing. Zdeněk Novotný CSc.
https://schema.org/isbn
  • 978-80-214-3717-3
http://localhost/t...ganizacniJednotka
  • 26220
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