About: Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltage Ta and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changes of the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decreasing or increas (en)
Title	Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics (en)
skos:prefLabel	Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics (en)
skos:notation	RIV/00216305:26220/08:PU78583!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Šikula, Josef Navarová, Hana Zedníček, Tomáš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	399025
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/08:PU78583
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	NbO capacitors, field crystalization (en)
http://linked.open.../riv/klicoveSlovo	NbO capacitors field crystalization
http://linked.open...ontrolniKodProRIV	[C86CEEE34902]
http://linked.open...v/mistoKonaniAkce	Helsinky
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	CARTS EUROPE 2008
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Sedláková, Vlasta Tacano, Munecazu Šikula, Josef Navarová, Hana Zedníček, Tomáš Hlávka, Jan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2008-10-20 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	10 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Neuveden
https://schema.org/isbn	0-7908-0121-3
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 58 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software