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  • The contribution is focused on determination of a temperature inside PN junction defect regions. These defect regions are called microplasmas. The microplasma is specified like region with a lower strong-field avalanche ionization breakdown voltage than other homogenous PN junction regions [1]. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junction at certain voltage. These local avalanche breakdowns may exhibit like a current impulse noise. These impulses are usually represented by constant amplitude, random pulse width and random pulse origin time points. During the measurement of the microplasma noise was observed a relation between two-states current impulse noise and a temperature of a PN junction defect region. The main goal of this article is a determination of temperature behavior inside the microplasma region depends on a current impulse noise time behavior.
  • The contribution is focused on determination of a temperature inside PN junction defect regions. These defect regions are called microplasmas. The microplasma is specified like region with a lower strong-field avalanche ionization breakdown voltage than other homogenous PN junction regions [1]. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junction at certain voltage. These local avalanche breakdowns may exhibit like a current impulse noise. These impulses are usually represented by constant amplitude, random pulse width and random pulse origin time points. During the measurement of the microplasma noise was observed a relation between two-states current impulse noise and a temperature of a PN junction defect region. The main goal of this article is a determination of temperature behavior inside the microplasma region depends on a current impulse noise time behavior. (en)
Title
  • Behavior of Temperature Inside PN Junction During Microplasma Switching
  • Behavior of Temperature Inside PN Junction During Microplasma Switching (en)
skos:prefLabel
  • Behavior of Temperature Inside PN Junction During Microplasma Switching
  • Behavior of Temperature Inside PN Junction During Microplasma Switching (en)
skos:notation
  • RIV/00216305:26220/08:PU76446!RIV10-MSM-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/06/1551), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
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  • 357737
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  • RIV/00216305:26220/08:PU76446
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • microplasma noise, PN junction, defect, diode, avalanche breakdown (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [34EE6485F7D5]
http://linked.open...v/mistoKonaniAkce
  • Budapest
http://linked.open...i/riv/mistoVydani
  • Budapest, Hungary
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  • Reliability and Life-time Prediction
http://linked.open...in/vavai/riv/obor
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Holcman, Vladimír
  • Koktavý, Pavel
  • Andreev, Alexey
  • Raška, Michal
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Zsolt Illyefalvi-Vitez
https://schema.org/isbn
  • 978-963-06-4915-5
http://localhost/t...ganizacniJednotka
  • 26220
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