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Description
  • popis (cs)
  • Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.
  • Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT. (en)
Title
  • TCAD simulation using van Dort quantum correction model
  • TCAD simulation using van Dort quantum correction model (en)
  • TCAD simulace s využitím van Dortova kvantově korekčního modelu (cs)
skos:prefLabel
  • TCAD simulation using van Dort quantum correction model
  • TCAD simulation using van Dort quantum correction model (en)
  • TCAD simulace s využitím van Dortova kvantově korekčního modelu (cs)
skos:notation
  • RIV/00216305:26220/07:PU71777!RIV08-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 437-441
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...iv/duvernostUdaju
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  • 454200
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  • RIV/00216305:26220/07:PU71777
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization. 2D, Threshold voltage, Quantum corrections,Van Dort model, DESSIS (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [CD4088A33392]
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  • BRNO
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Recman, Milan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • nakl. Novotný
https://schema.org/isbn
  • 978-80-214-3470-7
http://localhost/t...ganizacniJednotka
  • 26220
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