About: Direct tunneling through thin gate oxides

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	popis (cs) As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe. As the NMOSFET channel length continues to shrink and so does the gate oxide thickness, the dominant component of the leakage current through the gate oxide becomes the charge-carrier direct tunneling from the channel and source-drain extensions into the polygate. The contribution deals with TCAD simulation of this tunneling current in the NMOSFET structures with gate oxide thicknesses below 20 A. The 2D NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS simulates gate leakage current due to direct electron tunneling through the gate oxide and INSPECT generates and compares I-V plots for 7 different simulation runs. The individual simulations are run under GENESISe. (en)
Title	Direct tunneling through thin gate oxides Direct tunneling through thin gate oxides (en) Přímé tunelování tenkými hradlovými oxidy (cs)
skos:prefLabel	Direct tunneling through thin gate oxides Direct tunneling through thin gate oxides (en) Přímé tunelování tenkými hradlovými oxidy (cs)
skos:notation	RIV/00216305:26220/07:PU71776!RIV08-MSM-26220___
http://linked.open.../vavai/riv/strany	159-163
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Recman, Milan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	417460
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/07:PU71776
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	2D, MOSFET, Gate current, Direct tunneling, Device simulation, Device modeling, Short-channel effect, Leakage currents, MOS structure creation (en)
http://linked.open.../riv/klicoveSlovo	2D MOSFET Direct tunneling Gate current Leakage currents MOS structure creation Short-channel effect Device modeling Device simulation
http://linked.open...ontrolniKodProRIV	[1755AC1EB991]
http://linked.open...v/mistoKonaniAkce	BRNO
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...UplatneniVysledku	2007
http://linked.open...iv/tvurceVysledku	Recman, Milan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2007-09-20 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Ing. Zdeněk Novotný CSc.
https://schema.org/isbn	978-80-214-3470-7
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Direct tunneling through thin gate oxides Direct tunneling through thin gate oxides Direct tunneling through thin gate oxides

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