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  • We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.
  • We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature. (en)
  • We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature. (cs)
Title
  • RTS Noise and quantum transitions in submicron MOSFETs
  • RTS šum a kvantové přechody v submikronových součástkách MOSFET (cs)
  • RTS Noise and quantum transitions in submicron MOSFETs (en)
skos:prefLabel
  • RTS Noise and quantum transitions in submicron MOSFETs
  • RTS šum a kvantové přechody v submikronových součástkách MOSFET (cs)
  • RTS Noise and quantum transitions in submicron MOSFETs (en)
skos:notation
  • RIV/00216305:26220/07:PU70493!RIV08-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 138-141
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/05/2095), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 448614
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/07:PU70493
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • RTS noise, 1/f noise, MOSFET (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [A880C38D2CE7]
http://linked.open...v/mistoKonaniAkce
  • Brno
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • New Trends in Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Pavelka, Jan
  • Sedláková, Vlasta
  • Tacano, Munecazu
  • Toita, Masato
  • Šikula, Josef
  • Hlávka, Jan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Vysoké učení technické v Brně
https://schema.org/isbn
  • 978-80-7355-078-3
http://localhost/t...ganizacniJednotka
  • 26220
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