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  • The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. With a shorter observation time (number of RTS pulses - 7x105) the capture and emission time constants exactly follow an inverse carrier density dependence predicted by the standard Shockley-Read-Hall kinetics (SRH). On the other hand, with longer observation times (the number of pulses - 15x106 - more than 30 hours), the second emission process, which continues a parallel with the capture process ?c, is observed and simple SRH theory is disclaimed. Thus was proved that the occupation time probability density for the emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential. The distributions of the times in the 'high' and 'low' states according to SRH kinetics are expon
  • The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is on those RTS showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics. With a shorter observation time (number of RTS pulses - 7x105) the capture and emission time constants exactly follow an inverse carrier density dependence predicted by the standard Shockley-Read-Hall kinetics (SRH). On the other hand, with longer observation times (the number of pulses - 15x106 - more than 30 hours), the second emission process, which continues a parallel with the capture process ?c, is observed and simple SRH theory is disclaimed. Thus was proved that the occupation time probability density for the emission is given by a superposition of two exponential dependencies, whereas the capture time constant distribution is purely exponential. The distributions of the times in the 'high' and 'low' states according to SRH kinetics are expon (en)
  • Analýza RTS šumu v tomto článku vysvětluje proces zachycení a emise nosiče náboje v MOS struktuře. Důraz je kladen na ty procesy, které se liší od teorie popsané SRH kinetikou. Pro kratší pozorovací časy, je průběh zachycení a emise v semilogaritmickém zobrazení lineární a dle předpokladů kopíruje průběh předpovězený SRH, pro delší pozorovací časy emisní proces je dvoustavový a předurčuje vznik dalšího procesu ve vedení proudu v MOS struktuře. (cs)
Title
  • RTS noise - carrier capture and emission event duration
  • RTS šum - doba zachycení a emise (cs)
  • RTS noise - carrier capture and emission event duration (en)
skos:prefLabel
  • RTS noise - carrier capture and emission event duration
  • RTS šum - doba zachycení a emise (cs)
  • RTS noise - carrier capture and emission event duration (en)
skos:notation
  • RIV/00216305:26220/07:PU70101!RIV08-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 31-34
http://linked.open...avai/riv/aktivita
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  • P(GA102/05/2095), Z(MSM 262200022)
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  • 448615
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  • RIV/00216305:26220/07:PU70101
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http://linked.open.../riv/klicovaSlova
  • RTS noise, capture time, emission time, SRH kinetic (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [A112F1D0EABB]
http://linked.open...v/mistoKonaniAkce
  • Brno
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  • Brno
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  • New trends in Physics
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http://linked.open...vavai/riv/projekt
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  • Grmela, Lubomír
  • Pavelka, Jan
  • Šikula, Josef
  • Havránek, Jan
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http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Vysoké učení technické v Brně
https://schema.org/isbn
  • 978-80-7355-078-3
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  • 26220
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