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  • Ochranné ESD struktury se používají v integrovaných obvodech mezi zemí a jednotlivými pady jako napěťová ochrana proti elektrostatickému výboji. Článek se zabývá tyristorovou strukturou, která je typická pro CMOS technologie. V tomto článku je představena ESD ochrana, která svou podstatou vychází z tyristoru, ale je vyrobena v technologii VHVIC. (cs)
  • ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD.Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology.
  • ESD (electrostatic discharge) protection structures act as a protection of integrated circuits against parasitic electrostatic discharge events. They are located on input or output (I/O) pads. The use of such structures provides better robustness against ESD.Among often used structures belong structures known as SCR (silicon controlled rectifier) or thyristor. Typical application of SCR ESD protections is in submicron CMOS processes. This text is dealing with SCR structure, which was designed for VHVIC (very high voltage integrated circuits) technology. (en)
Title
  • SCR based protective structure against ESD for VHVIC technology
  • SCR based protective structure against ESD for VHVIC technology (en)
  • Ochranná ESD struktura vycházející z tyristoru pro technologii VHVIC (cs)
skos:prefLabel
  • SCR based protective structure against ESD for VHVIC technology
  • SCR based protective structure against ESD for VHVIC technology (en)
  • Ochranná ESD struktura vycházející z tyristoru pro technologii VHVIC (cs)
skos:notation
  • RIV/00216305:26220/07:PU68910!RIV08-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 306-310
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GD102/03/H105)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 449053
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/07:PU68910
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • ESD,SCR,LVTSCR (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [D645DE8DA02B]
http://linked.open...v/mistoKonaniAkce
  • BRNO
http://linked.open...i/riv/mistoVydani
  • Neuveden
http://linked.open...i/riv/nazevZdroje
  • Electronic devices and systems IMAPS CS International Conference 2007
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Běťák, Petr
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • Ing. Zdeněk Novotný CSc.
https://schema.org/isbn
  • 978-80-214-3470-7
http://localhost/t...ganizacniJednotka
  • 26220
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