About: On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions’ structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction. The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions’ structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction. (en) Článek pojednává o teoretických a experimentálních výsledcích získaných při studiu lokálních lavinových průrazů zpětně polarizovaných PN přechodů GaAsP LED diod. (cs)
Title	On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions Vlastnosti GaAsP diod při lokálních lavinových průrazech PN přechodu (cs) On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions (en)
skos:prefLabel	On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions Vlastnosti GaAsP diod při lokálních lavinových průrazech PN přechodu (cs) On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions (en)
skos:notation	RIV/00216305:26220/06:PU62989!RIV07-GA0-26220___
http://linked.open.../vavai/riv/strany	56-59
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/06/1551), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Koktavý, Pavel Koktavý, Bohumil
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	490493
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/06:PU62989
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization (en)
http://linked.open.../riv/klicoveSlovo	Avalanche PN junction GaAsP LED diode Microplasma noise Impact ionization
http://linked.open...ontrolniKodProRIV	[DC6F58DC73CD]
http://linked.open...v/mistoKonaniAkce	Bratislava
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	Physical and Material Engineering 2006
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Diagnostics of PN junction electronic devices by means of microplasma noise evaluation
http://linked.open...UplatneniVysledku	2006
http://linked.open...iv/tvurceVysledku	Koktavý, Pavel Koktavý, Bohumil
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2006-09-05 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Slovenská technická univerzita v Bratislave
https://schema.org/isbn	80-227-2467-X
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions

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