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Description
  • Článek se zabývá teplotní závislostí citlivosti přijímače s lavinovou fotodiodou použitého v bezkabelových optických spojích. Komunikační systémy tohoto typu jsou vystaveny působení širokého rozsahu teploty, která výrazně ovlivňuje parametry fotodiody i předzesilovače. Clánek prezentuje výpočet citlivosti respektující teplotní závislosti zisku fotodiody, faktoru přídavného šumu, proudu za tmy a termálního šumu odporů předzesilovače. Prezentovaný výpočet je demonstrován na kombinaci křemíkové lavinové fotodiody s relativně malou aktivní plochou pracující na vlnovém rozsahu 820 až 1150 nm s transimpedančním zesilovačem s bipolárním tranzistorem. (cs)
  • In the paper, the temperature dependence of the sensitivity of an avalanche-photodiode-based receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper describes receiver sensitivity calculation, taking into consideration the temperature dependence of avalanche photodiode gain, excess noise factor, dark current and thermal noise of preamplifier resistances. Presented calculation is demonstrated on the connection of a small-area silicon APD operating in the wavelength range from 820 to 1150 nm with a transimpedance preamplifier using a bipolar junction transistor.
  • In the paper, the temperature dependence of the sensitivity of an avalanche-photodiode-based receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper describes receiver sensitivity calculation, taking into consideration the temperature dependence of avalanche photodiode gain, excess noise factor, dark current and thermal noise of preamplifier resistances. Presented calculation is demonstrated on the connection of a small-area silicon APD operating in the wavelength range from 820 to 1150 nm with a transimpedance preamplifier using a bipolar junction transistor. (en)
Title
  • Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver
  • Teplotní závislost optického přijímače s lavinovou fotodiodou (cs)
  • Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver (en)
skos:prefLabel
  • Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver
  • Teplotní závislost optického přijímače s lavinovou fotodiodou (cs)
  • Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver (en)
skos:notation
  • RIV/00216305:26220/06:PU62359!RIV07-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 482-485
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/06/1358)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...iv/duvernostUdaju
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  • 503278
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/06:PU62359
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http://linked.open.../riv/klicovaSlova
  • transimpedance amplifier, avalanche photodiode, sensitivity, free space optics (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [52E291DD2E27]
http://linked.open...v/mistoKonaniAkce
  • Guilin
http://linked.open...i/riv/mistoVydani
  • Guilin, CHINA
http://linked.open...i/riv/nazevZdroje
  • The International Conference on Communication Technology
http://linked.open...in/vavai/riv/obor
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http://linked.open...vavai/riv/projekt
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  • Prokeš, Aleš
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • China Institute of Communications
https://schema.org/isbn
  • 1-4244-0800-8
http://localhost/t...ganizacniJednotka
  • 26220
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