About: ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Contact metal - semiconductor is an obligatory element of all semiconductor devices. Energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. Energy band diagram shows position of the Fermi level in metal and bottom of conductivity band Ec, valence band ceiling Ev, Fermi level, and impurity activation energy in the semiconductor. In the area of CdTe-metal interface arises a contact field. It causes bending of the energy bands in the depleted zoone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined. Contact metal - semiconductor is an obligatory element of all semiconductor devices. Energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. Energy band diagram shows position of the Fermi level in metal and bottom of conductivity band Ec, valence band ceiling Ev, Fermi level, and impurity activation energy in the semiconductor. In the area of CdTe-metal interface arises a contact field. It causes bending of the energy bands in the depleted zoone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined. (en) Contact metal - semiconductor is an obligatory element of all semiconductor devices. Energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. Energy band diagram shows position of the Fermi level in metal and bottom of conductivity band Ec, valence band ceiling Ev, Fermi level, and impurity activation energy in the semiconductor. In the area of CdTe-metal interface arises a contact field. It causes bending of the energy bands in the depleted zoone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined. (cs)
Title	ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS (en) Analýza kvality kontaktů v CdTe detektorech (cs)
skos:prefLabel	ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS (en) Analýza kvality kontaktů v CdTe detektorech (cs)
skos:notation	RIV/00216305:26220/06:PU57360!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany	102-106
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Zajaček, Jiří Andreev, Alexey
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	464899
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/06:PU57360
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	CdTe detectors,Energy band diagrams, VA characteristics, Shottky barrier (en)
http://linked.open.../riv/klicoveSlovo	Energy band diagrams Shottky barrier CdTe detectors VA characteristics
http://linked.open...ontrolniKodProRIV	[CBB2F97BBC59]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno, česká republika
http://linked.open...i/riv/nazevZdroje	Student EEICT 2006
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2006
http://linked.open...iv/tvurceVysledku	Andreev, Alexey Zajaček, Jiří
http://linked.open...vavai/riv/typAkce	CST - Celostátní
http://linked.open.../riv/zahajeniAkce	2006-04-27 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Ing. Zdeněk Novotný CSc.
https://schema.org/isbn	80-214-3162-8
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS ANALYSIS OF CONTACT QUALITY IN CDTE DETECTORS

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 110 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software