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  • The electrical model parameter extraction methodology proffitting from DESSIS device simulation techniques and HSPICE optimization procedures is presented. The described method based on the DESSIS-HSPICE link enables to search HSPICE model parameter correlations due to technology parameters variation. The link is capable to transform large amounts of data from DESSIS to HSPICE needed in described simple experiment. The electrical model parameters dependence on selected diode technology parameter is caalculated and displayed. The individual steps to create, mesh, and simulate diode structure, transform electrical data from DESSIS to HSPICE, extract model parameters for each technology parameter value and display the results are described.
  • The electrical model parameter extraction methodology proffitting from DESSIS device simulation techniques and HSPICE optimization procedures is presented. The described method based on the DESSIS-HSPICE link enables to search HSPICE model parameter correlations due to technology parameters variation. The link is capable to transform large amounts of data from DESSIS to HSPICE needed in described simple experiment. The electrical model parameters dependence on selected diode technology parameter is caalculated and displayed. The individual steps to create, mesh, and simulate diode structure, transform electrical data from DESSIS to HSPICE, extract model parameters for each technology parameter value and display the results are described. (en)
  • The electrical model parameter extraction methodology proffitting from DESSIS device simulation techniques and HSPICE optimization procedures is presented. The described method based on the DESSIS-HSPICE link enables to search HSPICE model parameter correlations due to technology parameters variation. The link is capable to transform large amounts of data from DESSIS to HSPICE needed in described simple experiment. The electrical model parameters dependence on selected diode technology parameter is caalculated and displayed. The individual steps to create, mesh, and simulate diode structure, transform electrical data from DESSIS to HSPICE, extract model parameters for each technology parameter value and display the results are described. (cs)
Title
  • Electrical model parameter correlations assesment using DESSIS
  • Electrical model parameter correlations assesment using DESSIS (en)
  • Electrical model parameter correlations assesment using DESSIS (cs)
skos:prefLabel
  • Electrical model parameter correlations assesment using DESSIS
  • Electrical model parameter correlations assesment using DESSIS (en)
  • Electrical model parameter correlations assesment using DESSIS (cs)
skos:notation
  • RIV/00216305:26220/05:PU54411!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 68-71
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...iv/duvernostUdaju
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  • 519900
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  • RIV/00216305:26220/05:PU54411
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  • device simulation, circuit simulation, model parameters extraction (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [02BBE162B070]
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  • Chania, Crete, Greece
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  • Brno
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  • Socrates Workshop 2005, Intensive Training Programme in Electronic System Design - Proceedings
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  • Recman, Milan
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http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Ing. Zdeněk Novotný CSc.
https://schema.org/isbn
  • 80-214-3042-7
http://localhost/t...ganizacniJednotka
  • 26220
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