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Description
  • The HSPICE model parameters extraction of submicrometer NMOS structure is presented. The selected electrical curves are generated by parametrized device simulator DESSIS and substitute for the measured ones in an optimization HSPICE procedure. Electricalsimulator HSPICE extracts parameter numerical values of built-in model, simulates electrical curves on the basis of extracted parameters and displays the results. The individual steps to create, mesh and simulate device structure, transform DESSIS outp put data, extract model parameter values and evaluate results are described.
  • The HSPICE model parameters extraction of submicrometer NMOS structure is presented. The selected electrical curves are generated by parametrized device simulator DESSIS and substitute for the measured ones in an optimization HSPICE procedure. Electricalsimulator HSPICE extracts parameter numerical values of built-in model, simulates electrical curves on the basis of extracted parameters and displays the results. The individual steps to create, mesh and simulate device structure, transform DESSIS outp put data, extract model parameter values and evaluate results are described. (en)
  • The HSPICE model parameters extraction of submicrometer NMOS structure is presented. The selected electrical curves are generated by parametrized device simulator DESSIS and substitute for the measured ones in an optimization HSPICE procedure. Electricalsimulator HSPICE extracts parameter numerical values of built-in model, simulates electrical curves on the basis of extracted parameters and displays the results. The individual steps to create, mesh and simulate device structure, transform DESSIS outp put data, extract model parameter values and evaluate results are described. (cs)
Title
  • NMOS electrical characterization
  • NMOS electrical characterization (en)
  • NMOS electrical characterization (cs)
skos:prefLabel
  • NMOS electrical characterization
  • NMOS electrical characterization (en)
  • NMOS electrical characterization (cs)
skos:notation
  • RIV/00216305:26220/05:PU54409!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 72-76
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
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http://linked.open...dnocenehoVysledku
  • 532915
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/05:PU54409
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • device simulation, circuit simulation, model parameters extraction (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [E1ACB368C712]
http://linked.open...v/mistoKonaniAkce
  • Chania, Crete, Greece
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • Socrates Workshop 2005, Intensive Training Programme in Electronic System Design - Proceedings
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Recman, Milan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Ing. Zdeněk Novotný CSc.
https://schema.org/isbn
  • 80-214-3042-7
http://localhost/t...ganizacniJednotka
  • 26220
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