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  • The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 210-3, respectively, which is consistent with the 1/f energy partition fluctuations moddel. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy of about 0.6e
  • The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 210-3, respectively, which is consistent with the 1/f energy partition fluctuations moddel. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy of about 0.6e (en)
  • Nízkofrekvenční šum InGaAs/InAlAs heterostruktur s různou koncentrací In byl zjišťován v teplotním rozsahu 15K až 300K a experimentální hodnoty porovnány s teoretickým odhadem fluktuace mobility dané různými procesy rozptylu. Naměřené hodnoty Hoogeho parametru pro n- a p-typ jsou diskutovány v rámci modelu 1/f fluktuace rozdělení energie a kvantového modelu 1/f šumu. (cs)
Title
  • Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures
  • Nízkofrekvenční šum a spektroskopie pastí v InGaAs/InAlAs heterostrukturách (cs)
  • Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures (en)
skos:prefLabel
  • Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures
  • Nízkofrekvenční šum a spektroskopie pastí v InGaAs/InAlAs heterostrukturách (cs)
  • Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures (en)
skos:notation
  • RIV/00216305:26220/05:PU52172!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 147-154
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  • P(ME 605), Z(MSM0021630503)
http://linked.open...iv/cisloPeriodika
  • 1
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  • 528456
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  • RIV/00216305:26220/05:PU52172
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • InGaAs HEMT, 1/f noise, RTS noise (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • JP - Japonsko
http://linked.open...ontrolniKodProRIV
  • [79C61C4D62DC]
http://linked.open...i/riv/nazevZdroje
  • Research Bulletin of Meisei University - Physical Sciences and Engineering
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 41
http://linked.open...iv/tvurceVysledku
  • Pavelka, Jan
  • Tacano, Munecazu
  • Šikula, Josef
  • Tanuma, Nobuhisa
http://linked.open...n/vavai/riv/zamer
issn
  • 1346-7239
number of pages
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  • 26220
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