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Description
  • We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey's flux method captures the essential physics of carrier transport in transistors and has been previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation wwith channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.
  • We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey's flux method captures the essential physics of carrier transport in transistors and has been previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation wwith channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman. (en)
  • Rádi bychom představili dvou-hradlový tranzistor typu MOSFET založený na McKelveyho teorii toků. Dvě hradla zajišťují dobrou elektrickou integritu a minimalizují tzv. drain induced barrier lowering. (cs)
Title
  • A Compact Model of the Nanoscale Double-Gate MOSFET.
  • Kompaktní model nanorozměrového dvou-hradlového tranzistoru typu MOSFET. (cs)
  • A Compact Model of the Nanoscale Double-Gate MOSFET. (en)
skos:prefLabel
  • A Compact Model of the Nanoscale Double-Gate MOSFET.
  • Kompaktní model nanorozměrového dvou-hradlového tranzistoru typu MOSFET. (cs)
  • A Compact Model of the Nanoscale Double-Gate MOSFET. (en)
skos:notation
  • RIV/00216305:26220/05:PU51327!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 11-15
http://linked.open...avai/riv/aktivita
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  • Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat
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  • 510773
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  • RIV/00216305:26220/05:PU51327
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  • Double-Gate MOSFET, drain-induced barrier lowering, backscattering coefficient. (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [B24892EB2531]
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  • Brno
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  • Brno
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  • EDS'05 IMAPS CS INTERNATIONAL CONFERENCE PROCEEDINGS
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  • Horák, Michal
  • Ficek, Richard
http://linked.open...vavai/riv/typAkce
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http://linked.open...n/vavai/riv/zamer
number of pages
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  • Vysoké učení technické v Brně
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  • 80-214-2990-9
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  • 26220
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