About: Dependence of Hooge constant on mean free path of materials

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Description	The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values. The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values. (en) The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameteras alfaH = a/lambda, the ratio of the lattice constant a and the mean free path lambda. Several reported experimental results on alfaH for very pure semiconductors are found on the a/lambda line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and correspondin g lambda values. (cs)
Title	Dependence of Hooge constant on mean free path of materials Dependence of Hooge constant on mean free path of materials (en) Závislost Hoogeova parametru na střední volné dráze v materiálech (cs)
skos:prefLabel	Dependence of Hooge constant on mean free path of materials Dependence of Hooge constant on mean free path of materials (en) Závislost Hoogeova parametru na střední volné dráze v materiálech (cs)
skos:notation	RIV/00216305:26220/04:PU52207!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany	310-319
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM 262200022)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Pavelka, Jan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	559738
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/04:PU52207
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Hooge constant, mean free path, compound semiconductors, InGaAs, InP, GaAs, mobility fluctuations (en)
http://linked.open.../riv/klicoveSlovo	Hooge constant mean free path mobility fluctuations GaAs InP InGaAs compound semiconductors
http://linked.open...ontrolniKodProRIV	[C6F15680E20A]
http://linked.open...v/mistoKonaniAkce	Maspalomas, Gran Canaria
http://linked.open...i/riv/mistoVydani	USA
http://linked.open...i/riv/nazevZdroje	Proc. of 2nd SPIE Symposium Fluctuation and Noise in Materials
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2004
http://linked.open...iv/tvurceVysledku	Pavelka, Jan Tacano, Munecazu Tanuma, Nobuhisa Hashiguchi, Sumihisa Yokokura, Saburo
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2004-05-26 (xsd:date)
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20262200022
number of pages	10 (xsd:int)
http://purl.org/ne...btex#hasPublisher	The Society of Photo-Optical Instrumentation Engineers
https://schema.org/isbn	0-8194-5392-7
http://localhost/t...ganizacniJednotka	26220

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