About: Diode Model Parameters Extraction     Goto   Sponge   NotDistinct   Permalink

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Description
  • Příspěvek popisuje využití simulačních prostředků ISE-TCAD a optimalizačních prostředků elektrického simulátoru Star-HSPICE pro identifikaci parametrů diodového modelu. Jsou analyzovány a popsány jednotlivé kroky zahrnující simulaci diody strukturním simulátorem DESSIS, analýza a výběr I-V elektrických charakteristik modulem INSPECT, formatování vstupních dat pro HSPICE, optimalizaci modelových parametrů a vyhodnocení modelu. Navržená metoda extrakce modelových parametrů je použita pro identifikaci paraametrů zabudovaného modelu diody. (cs)
  • The contribution examines use of ISE-TCAD device simulation tools and the Star-HSPICE optimization tools to extract diode model parameters. The individual steps included in DESSIS diode simulation, INSPECT I-V electrical characteristics selection, HSPICE input data formatting, model parameters optimization and model evaluation are analysed and described. The extraction methodology using DESSIS simulated data as real (measured) electrical characteristics and HSPICE optimization procedures is proposed annd applied to find the parameter values of the HSPICE diode model.
  • The contribution examines use of ISE-TCAD device simulation tools and the Star-HSPICE optimization tools to extract diode model parameters. The individual steps included in DESSIS diode simulation, INSPECT I-V electrical characteristics selection, HSPICE input data formatting, model parameters optimization and model evaluation are analysed and described. The extraction methodology using DESSIS simulated data as real (measured) electrical characteristics and HSPICE optimization procedures is proposed annd applied to find the parameter values of the HSPICE diode model. (en)
Title
  • Diode Model Parameters Extraction
  • Diode Model Parameters Extraction (en)
  • Identifikace parametrů modelu diody (cs)
skos:prefLabel
  • Diode Model Parameters Extraction
  • Diode Model Parameters Extraction (en)
  • Identifikace parametrů modelu diody (cs)
skos:notation
  • RIV/00216305:26220/04:PU46127!RIV06-GA0-26220___
http://linked.open.../vavai/riv/strany
  • 55-60
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/03/0720), Z(MSM 262200022)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 560690
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/04:PU46127
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • device simulation, circuit simulation, model parameters extraction (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [B68586CE6B9D]
http://linked.open...v/mistoKonaniAkce
  • Technological Institute of Crete, Chania, Greece
http://linked.open...i/riv/mistoVydani
  • NEUVEDEN
http://linked.open...i/riv/nazevZdroje
  • Socrates Workshop 2004. Intensive Training Programme in Electronic
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Recman, Milan
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Neuveden
https://schema.org/isbn
  • 80-214-2819-8
http://localhost/t...ganizacniJednotka
  • 26220
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