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Description
  • The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.
  • The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application. (en)
  • Článek ukazuje, jak může být SNOM použit na charakterizování polovodičů s kvantovými jámami. Nekteré optické charakterizační metody, které jsou značně používány ve vzdáleném poli, jako jsou odrazivost, spektroskopie diferenční odrazivosti, životnost nosičů jsou zkoumány z hlediska blízkého pole používajího SNOM. Pro některé těchto technik jsou prezentována experimentální data. (cs)
Title
  • Lokální měření fotoluminiscence defektů polovodičového povrchu (cs)
  • Local photoluminescence measurements of semiconductor surface defects
  • Local photoluminescence measurements of semiconductor surface defects (en)
skos:prefLabel
  • Lokální měření fotoluminiscence defektů polovodičového povrchu (cs)
  • Local photoluminescence measurements of semiconductor surface defects
  • Local photoluminescence measurements of semiconductor surface defects (en)
skos:notation
  • RIV/00216305:26220/04:PU43759!RIV/2005/MSM/262205/N
http://linked.open.../vavai/riv/strany
  • 131-137
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 544), Z(MSM 262200022)
http://linked.open...iv/cisloPeriodika
  • 5477
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 571697
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/04:PU43759
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [D09849362EE2]
http://linked.open...i/riv/nazevZdroje
  • Proceedings of SPIE
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • NEUVEDEN
http://linked.open...iv/tvurceVysledku
  • Tománek, Pavel
  • Dobis, Pavel
  • Brüstlová, Jitka
  • Uhdeová, Naděžda
  • Benešová, Markéta
http://linked.open...n/vavai/riv/zamer
issn
  • 0277-786X
number of pages
http://localhost/t...ganizacniJednotka
  • 26220
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