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rdf:type
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Description
| - The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application.
- The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application. (en)
- Článek ukazuje, jak může být SNOM použit na charakterizování polovodičů s kvantovými jámami. Nekteré optické charakterizační metody, které jsou značně používány ve vzdáleném poli, jako jsou odrazivost, spektroskopie diferenční odrazivosti, životnost nosičů jsou zkoumány z hlediska blízkého pole používajího SNOM. Pro některé těchto technik jsou prezentována experimentální data. (cs)
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Title
| - Lokální měření fotoluminiscence defektů polovodičového povrchu (cs)
- Local photoluminescence measurements of semiconductor surface defects
- Local photoluminescence measurements of semiconductor surface defects (en)
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skos:prefLabel
| - Lokální měření fotoluminiscence defektů polovodičového povrchu (cs)
- Local photoluminescence measurements of semiconductor surface defects
- Local photoluminescence measurements of semiconductor surface defects (en)
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skos:notation
| - RIV/00216305:26220/04:PU43759!RIV/2005/MSM/262205/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(ME 544), Z(MSM 262200022)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/04:PU43759
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Tománek, Pavel
- Dobis, Pavel
- Brüstlová, Jitka
- Uhdeová, Naděžda
- Benešová, Markéta
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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