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  • For economical reason, it is highly desirable to implement the analog part of mainly digital system on chip in standard CMOS process. The advantages are low cost and area requirements, the disadvantages are non-linear C-V characteristics and problems resulting from it. This paper describes possibilities of using standard MOSFET gate structure as capacitor.
  • For economical reason, it is highly desirable to implement the analog part of mainly digital system on chip in standard CMOS process. The advantages are low cost and area requirements, the disadvantages are non-linear C-V characteristics and problems resulting from it. This paper describes possibilities of using standard MOSFET gate structure as capacitor. (en)
  • Z ekonomických důvodů je výhodné implementovat analogovou část, převážně digitálního systému, na čipu ve standardním technologickém CMOS procesu. Výhody jsou nízká cena a malé prostorové nároky, nevýhodou je nelineární C-V charakteristika a problémy z toho vyplývající. Tento příspěvek popisuje možnosti použití standardního tranzistoru MOSFET jako kondenzátoru. (cs)
Title
  • MOS Capacitors
  • MOS Capacitors (en)
  • MOS kondenzátory (cs)
skos:prefLabel
  • MOS Capacitors
  • MOS Capacitors (en)
  • MOS kondenzátory (cs)
skos:notation
  • RIV/00216305:26220/04:PU41732!RIV/2005/GA0/262205/N
http://linked.open.../vavai/riv/strany
  • 684-688
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  • P(GD102/03/H105)
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  • 574627
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  • RIV/00216305:26220/04:PU41732
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  • CMOS process, non-linear C-V characteristic, MOSFET gate, MOS capacitor. (en)
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  • [27B872B11C03]
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  • Brno
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  • Brno
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  • Proceedings of the10th conference and competition Student EEICT 2004 Volume 3
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  • Sutorý, Tomáš
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number of pages
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  • Ing. Zdeněk Novotný CSc.
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  • 80-214-2636-5
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  • 26220
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