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rdf:type
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Description
| - Je prezentováno modelování korelací mezi kritickými parametry modelu bipolárního tranzistoru pro přímý aktivní režim. (cs)
- Since the active elements are fabricated during a common sequence of processing steps, the values of these elements are correlated. The active devices such as bipolar transistors must be completely statistically characterized to account for the model parameter interdependencies. The contribution aims to give the fundamental steps included in HSPICE active device statistical characterization. The modeling of correlations between the crucial bipolar transistor model parameters for forward active reggion is presented. The synthesis of correlated model including saturation current, forward beta and Early-effect parameter is described.
- Since the active elements are fabricated during a common sequence of processing steps, the values of these elements are correlated. The active devices such as bipolar transistors must be completely statistically characterized to account for the model parameter interdependencies. The contribution aims to give the fundamental steps included in HSPICE active device statistical characterization. The modeling of correlations between the crucial bipolar transistor model parameters for forward active reggion is presented. The synthesis of correlated model including saturation current, forward beta and Early-effect parameter is described. (en)
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Title
| - HSPICE Statistical Modeling
- HSPICE Statistical Modeling (en)
- Statistické modelování s programem HSPICE (cs)
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skos:prefLabel
| - HSPICE Statistical Modeling
- HSPICE Statistical Modeling (en)
- Statistické modelování s programem HSPICE (cs)
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skos:notation
| - RIV/00216305:26220/03:PU39337!RIV06-GA0-26220___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/03/0720), Z(MSM 262200022)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/03:PU39337
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - circuit simulation, semiconductor device modeling, statistical model, transistor modeling (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
| - Technological Institute of Crete, Chania, Greece
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Proceedings of the Socrates Workshop 2003
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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