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  • The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presente
  • The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presente (en)
Title
  • Local optical imaging of electronic characteristics in semiconductors
  • Local optical imaging of electronic characteristics in semiconductors (en)
skos:prefLabel
  • Local optical imaging of electronic characteristics in semiconductors
  • Local optical imaging of electronic characteristics in semiconductors (en)
skos:notation
  • RIV/00216305:26220/03:PU37385!RIV/2004/MSM/262204/N
http://linked.open.../vavai/riv/strany
  • 445-448
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 544), P(OC 523.40), Z(MSM 262200022)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 613737
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/03:PU37385
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor, nanostructure, measurement, local characteristics (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [E2832B9FA9AA]
http://linked.open...v/mistoKonaniAkce
  • Prague
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • Noise and fluctuation ICNF 2003
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...ocetUcastnikuAkce
http://linked.open...nichUcastnikuAkce
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Grmela, Lubomír
  • Tománek, Pavel
  • Dobis, Pavel
  • Otevřelová, Dana
  • Benešová, Markéta
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Neuveden
https://schema.org/isbn
  • 80-239-1005-1
http://localhost/t...ganizacniJednotka
  • 26220
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