About: Near-field optical imaging of carrier dynamics in silicon with superresolution     Goto   Sponge   NotDistinct   Permalink

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Description
  • The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characterisstic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.
  • The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characterisstic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active. (en)
Title
  • Near-field optical imaging of carrier dynamics in silicon with superresolution
  • Near-field optical imaging of carrier dynamics in silicon with superresolution (en)
skos:prefLabel
  • Near-field optical imaging of carrier dynamics in silicon with superresolution
  • Near-field optical imaging of carrier dynamics in silicon with superresolution (en)
skos:notation
  • RIV/00216305:26220/03:PU31773!RIV/2004/MSM/262204/N
http://linked.open.../vavai/riv/strany
  • 63-65
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 544), P(OC 523.40), Z(MSM 262200022)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 617418
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/03:PU31773
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [9076CB37676A]
http://linked.open...v/mistoKonaniAkce
  • Nizhniy Novgorod
http://linked.open...i/riv/mistoVydani
  • Nizhniy Novgorod, Russia
http://linked.open...i/riv/nazevZdroje
  • Scanning Probe Microscopy - 2003
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...ocetUcastnikuAkce
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Grmela, Lubomír
  • Tománek, Pavel
  • Dobis, Pavel
  • Otevřelová, Dana
  • Benešová, Markéta
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Institute for Physics of microstructures RAS
http://localhost/t...ganizacniJednotka
  • 26220
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