About: Low Frequency Noise of Tantalum Capacitors

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In the system partial discharges appear with stochastic behaviour. In time domain this fluctuations are realized by current pulses with random amplitude and random time interval between consecutive pulses. Their probability statistics depends on the time variation of the applied voltage. For DC voltage the pulse occurrence is rather low, while for ramp voltage the average pulse rate is directly proportional to the voltage rate. In the latter case the polarization current is constant. From this point of view the fluctuations are proportional to the polarization current value. The partial discharges create irreversible process, which can lead to the breakdown. The occurrence of current pulses and their magnitude are used as reliability indicator. In the system partial discharges appear with stochastic behaviour. In time domain this fluctuations are realized by current pulses with random amplitude and random time interval between consecutive pulses. Their probability statistics depends on the time variation of the applied voltage. For DC voltage the pulse occurrence is rather low, while for ramp voltage the average pulse rate is directly proportional to the voltage rate. In the latter case the polarization current is constant. From this point of view the fluctuations are proportional to the polarization current value. The partial discharges create irreversible process, which can lead to the breakdown. The occurrence of current pulses and their magnitude are used as reliability indicator. (en)
Title	Low Frequency Noise of Tantalum Capacitors Low Frequency Noise of Tantalum Capacitors (en)
skos:prefLabel	Low Frequency Noise of Tantalum Capacitors Low Frequency Noise of Tantalum Capacitors (en)
skos:notation	RIV/00216305:26220/02:PU31485!RIV/2003/MSM/262203/N
http://linked.open.../vavai/riv/strany	161-167
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM 262200022)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Hlávka, Jan Pavelka, Jan Grmela, Lubomír Sedláková, Vlasta Šikula, Josef
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	652117
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/02:PU31485
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Spectral density, noise spectroscopy, noise 1/f (en)
http://linked.open.../riv/klicoveSlovo	noise spectroscopy Spectral density noise 1/f
http://linked.open...odStatuVydavatele	GR - Řecká republika
http://linked.open...ontrolniKodProRIV	[CE92010007AA]
http://linked.open...i/riv/nazevZdroje	Active and Passive Electronic ComponentsISSN
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...UplatneniVysledku	2002
http://linked.open...v/svazekPeriodika	25
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Pavelka, Jan Sedláková, Vlasta Tacano, Munecazu Šikula, Josef Hlávka, Jan Hashiguchi, Sumihisa
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20262200022
issn	0882-7516
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	26220

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