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  • Photoluminescence (PL), photoreflectance (PR) and photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental methods to investigate the properties of bulk semiconductors, microstructures, surfaces and interfaces. We present near-field local PL, PR and PC spectroscopic study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (SNOM) in combination with Nitrogen laser and tuning dye laser and with He-Ne laser. Refleection Scanning Near-field Optical Microscope (SNOM) employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. In the illumination-collection hybrid mode, the first one serves to excite the semiconductor sample and the second one to investigate characteristics of the structure and to pick up the PL and PR intensity reflected from the sample. In the illumination mode, the nanosource illuminates locally the semiconductor structure, and excites the photoelectrons in
  • Photoluminescence (PL), photoreflectance (PR) and photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental methods to investigate the properties of bulk semiconductors, microstructures, surfaces and interfaces. We present near-field local PL, PR and PC spectroscopic study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (SNOM) in combination with Nitrogen laser and tuning dye laser and with He-Ne laser. Refleection Scanning Near-field Optical Microscope (SNOM) employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. In the illumination-collection hybrid mode, the first one serves to excite the semiconductor sample and the second one to investigate characteristics of the structure and to pick up the PL and PR intensity reflected from the sample. In the illumination mode, the nanosource illuminates locally the semiconductor structure, and excites the photoelectrons in (en)
Title
  • Local optical characteristics of semiconductor surfaces
  • Local optical characteristics of semiconductor surfaces (en)
skos:prefLabel
  • Local optical characteristics of semiconductor surfaces
  • Local optical characteristics of semiconductor surfaces (en)
skos:notation
  • RIV/00216305:26220/02:PU27220!RIV/2003/MSM/262203/N
http://linked.open.../vavai/riv/strany
  • 168-177
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(OC 523.40), Z(MSM 262200022)
http://linked.open...iv/cisloPeriodika
  • 2
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 651988
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/02:PU27220
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Scanning near-field optical microscopy, resolution, local photoluminescence, local photoreflectance, local current spectroscopy (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [57FC7947DFC7]
http://linked.open...i/riv/nazevZdroje
  • Proceedings of SPIE
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...ocetUcastnikuAkce
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 4607
http://linked.open...iv/tvurceVysledku
  • Tománek, Pavel
  • Dobisová, Markéta
  • Létal, Petr
  • Košťálová, Dana
http://linked.open...n/vavai/riv/zamer
issn
  • 0277-786X
number of pages
http://localhost/t...ganizacniJednotka
  • 26220
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