About: Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements

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About: Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter. The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter. (en)
Title	Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements (en)
skos:prefLabel	Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements (en)
skos:notation	RIV/00216305:26220/01:PU24338!RIV/2002/MSM/262202/N
http://linked.open.../vavai/riv/strany	3979-3984
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ME 285)
http://linked.open...iv/cisloPeriodika	6A
http://linked.open...vai/riv/dodaniDat	2002
http://linked.open...aciTvurceVysledku	Šikula, Josef
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	679133
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/01:PU24338
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Noise, SiC, Ni/n-SiC Contact (en)
http://linked.open.../riv/klicoveSlovo	Noise Ni/n-SiC Contact SiC
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[A2D98CEB7A84]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	http://linked.opendata.cz/resource/domain/vavai/projekt/ME%20285
http://linked.open...UplatneniVysledku	2001
http://linked.open...v/svazekPeriodika	40
http://linked.open...iv/tvurceVysledku	Tacano, Munecazu Šikula, Josef Tanuma, Nobuhisa Matsui, Toshiaki Hashiguchi, Sumihisa Yasukawa, Satoshi Yokokura, Saburo
issn	0021-4922
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	26220

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