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rdf:type
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Description
| - Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m
- Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m (en)
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Title
| - PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes
- PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes (en)
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skos:prefLabel
| - PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes
- PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes (en)
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skos:notation
| - RIV/00216305:26220/01:PU23912!RIV/2002/GA0/262202/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/99/1088), P(GA103/01/1058)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/01:PU23912
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Microplasma noise, Local avalanche breakdown, LED diodes, Reliability (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
| - Gainesville, Florida, USA
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...ocetUcastnikuAkce
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http://linked.open...nichUcastnikuAkce
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Koktavý, Pavel
- Šikula, Josef
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - University of Florida, Gainesville, Florida, USA
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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