About: Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

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About: Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycryst The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycryst (en)
Title	Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates (en)
skos:prefLabel	Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates (en)
skos:notation	RIV/00216305:26210/10:PU86906!RIV11-MSM-26210___
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...iv/cisloPeriodika	14
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Šikola, Tomáš Spousta, Jiří Válek, Lukáš Lysáček, David
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	292744
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/10:PU86906
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Chemical vapor deposition, Structural properties, Polycrystalline silicon, Recrystallization, Grain growth (en)
http://linked.open.../riv/klicoveSlovo	Polycrystalline silicon Recrystallization Structural properties Chemical vapor deposition Grain growth
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[EBF89AAFE2B6]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	518
http://linked.open...iv/tvurceVysledku	Spousta, Jiří Šikola, Tomáš Válek, Lukáš Lysáček, David Špetík, R.
issn	0040-6090
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	26210
is http://linked.open...avai/riv/vysledek of	Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates

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