About: Stability of hydrogen-terminated silicon surface under ambient atmosphere

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere. In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere. (en)
Title	Stability of hydrogen-terminated silicon surface under ambient atmosphere Stability of hydrogen-terminated silicon surface under ambient atmosphere (en)
skos:prefLabel	Stability of hydrogen-terminated silicon surface under ambient atmosphere Stability of hydrogen-terminated silicon surface under ambient atmosphere (en)
skos:notation	RIV/00216305:26210/10:PU85842!RIV10-MSM-26210___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GEFON/06/E001), P(KAN400100701), P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Bartošík, Miroslav Kolíbal, Miroslav Mach, Jindřich Šikola, Tomáš Čechal, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	289580
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/10:PU85842
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon substrates, Wet-chemical pre-treatment, Etching, Oxidation, X-ray photoelectron spectroscopy (en)
http://linked.open.../riv/klicoveSlovo	Oxidation X-ray photoelectron spectroscopy Etching Silicon substrates Wet-chemical pre-treatment
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[C2EFB1238B80]
http://linked.open...i/riv/nazevZdroje	Applied Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS) Spin-dependent transport and electronic correlations in nanostructures Structures for Nanophotonics and Nanoelectronics
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	256
http://linked.open...iv/tvurceVysledku	Kolíbal, Miroslav Mach, Jindřich Šikola, Tomáš Čechal, Jan Bartošík, Miroslav
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
issn	0169-4332
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	26210
is http://linked.open...avai/riv/vysledek of	Stability of hydrogen-terminated silicon surface under ambient atmosphere Stability of hydrogen-terminated silicon surface under ambient atmosphere Stability of hydrogen-terminated silicon surface under ambient atmosphere

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