About: Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film     Goto   Sponge   NotDistinct   Permalink

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  • We present a straightforward method for fabrication of patterns of metallic nanostructures. The focused ion beam lithography (FIB) has been used to locally modify a native SiO2 layer on a silicon substrate. On the modified areas preferential nucleation of cobalt islands is observed. The cobalt islands formed upon deposition at 400 - 430 C combined with an intermediate annealing at 550 C have a uniform size distribution and their size can be controlled by the distance between the nucleation sites and the amount of deposited material. It is proposed that the island formation at patterned sites is due to reduced surface diffusion of Co atoms in the vicinity of FIB modified areas. The intermediate annealing improves the island morphology since the kinetic diffusion limits are lowered and system reconfigures towards its equilibrium state.
  • We present a straightforward method for fabrication of patterns of metallic nanostructures. The focused ion beam lithography (FIB) has been used to locally modify a native SiO2 layer on a silicon substrate. On the modified areas preferential nucleation of cobalt islands is observed. The cobalt islands formed upon deposition at 400 - 430 C combined with an intermediate annealing at 550 C have a uniform size distribution and their size can be controlled by the distance between the nucleation sites and the amount of deposited material. It is proposed that the island formation at patterned sites is due to reduced surface diffusion of Co atoms in the vicinity of FIB modified areas. The intermediate annealing improves the island morphology since the kinetic diffusion limits are lowered and system reconfigures towards its equilibrium state. (en)
Title
  • Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film
  • Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film (en)
skos:prefLabel
  • Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film
  • Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film (en)
skos:notation
  • RIV/00216305:26210/09:PU80279!RIV10-MSM-26210___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GEFON/06/E001), P(KAN400100701), P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika
  • 8
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 340656
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26210/09:PU80279
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Focused ion beam, FIB, Silicon, Si, Silicon dioxide, SiO2, Cobalt, Co, Guided self-assembly (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [72EC0D40AB41]
http://linked.open...i/riv/nazevZdroje
  • Journal of Aplied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 105
http://linked.open...iv/tvurceVysledku
  • Kolíbal, Miroslav
  • Mach, Jindřich
  • Šikola, Tomáš
  • Čechal, Jan
  • Škoda, David
  • Hrnčíř, Tomáš
  • Tomanec, Ondřej
  • Koňáková, Kateřina
http://linked.open...n/vavai/riv/zamer
issn
  • 0021-8979
number of pages
http://localhost/t...ganizacniJednotka
  • 26210
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