About: A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments. Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments. (en) Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody (cs)
Title	A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water (en) Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody (cs)
skos:prefLabel	A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water (en) Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody (cs)
skos:notation	RIV/00216305:26210/07:PU67592!RIV07-MSM-26210___
http://linked.open.../vavai/riv/strany	2047-2053
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika	9
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Kostelník, Petr Voborný, Stanislav Mach, Jindřich Šikola, Tomáš Spousta, Jiří Čechal, Jan Bábor, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	408225
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/07:PU67592
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Gallium, Ga, Silicon, Si(100), Water, Surface structure, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy (en)
http://linked.open.../riv/klicoveSlovo	Silicon Ga Water Synchrotron radiation photoelectron spectroscopy Si(100) Surface structure Gallium Low energy electron diffraction (LEED)
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[38BB0A37C41A]
http://linked.open...i/riv/nazevZdroje	Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	7 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Structures for Nanophotonics and Nanoelectronics
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	601
http://linked.open...iv/tvurceVysledku	Kostelník, Petr Mach, Jindřich Spousta, Jiří Voborný, Stanislav Šikola, Tomáš Bábor, Petr Čechal, Jan
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
issn	0039-6028
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	26210
is http://linked.open...avai/riv/vysledek of	A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water

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