About: A Study of Gallium Growth on Si(111) 7x7 by SRPES

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Description	We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures - room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural annd morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR - PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand. We present the results of a study of gallium growth on Si(111) 7x7 substrates by SR-PES and LEED. Using synchrotron radiation core-level spectroscopy performed at the synchrotron Elettra in Trieste we were able to get high-resolution spectra during gallium deposition. The deposition was done at three different substrate temperatures - room, low (-180 C) and enhanced (350 C). The prepared gallium layers (up to a few MLs) were gradually annealed afterwards to study gallium desorption and its structural annd morphological changes. The results of our study were compared with other complementary measurements done by thermodesorption spectroscopy (TDS), LEED, TOF-LEIS and XPS. The high sensitivity and resolution of SR - PES made us possible to reveal the relations between peak shape and intensity changes on one hand and the film thickness and morphology induced by Ga growth and thermal annealing on the other hand. (en) Prezentace se zabývá studiem počátečních stádií růstu velmi tenkých vrstev gallia pomocí SR-PES a LEED. (cs)
Title	A Study of Gallium Growth on Si(111) 7x7 by SRPES A Study of Gallium Growth on Si(111) 7x7 by SRPES (en) Studium růstu gallia na Si(111) 7x7 pomocí SRPES (cs)
skos:prefLabel	A Study of Gallium Growth on Si(111) 7x7 by SRPES A Study of Gallium Growth on Si(111) 7x7 by SRPES (en) Studium růstu gallia na Si(111) 7x7 pomocí SRPES (cs)
skos:notation	RIV/00216305:26210/05:PU54248!RIV06-MSM-26210___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021630508)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Šikola, Tomáš Spousta, Jiří Čechal, Jan Bábor, Petr
http://linked.open.../riv/druhVysledku	A(V) - Audiovizuální tvorba se vzdáleným přístupem
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	511114
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/05:PU54248
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Ga, Si(111), SRPES, photoelectron spectroscopy (en)
http://linked.open.../riv/klicoveSlovo	Ga Si(111) photoelectron spectroscopy SRPES
http://linked.open...i/riv/kodPristupu	L
http://linked.open...ontrolniKodProRIV	[CA3557497278]
http://linked.open...i/riv/mistoVydani	Vienna
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Spousta, Jiří Šikola, Tomáš Bábor, Petr Čechal, Jan
http://linked.open...rzeVyzkumneZpravy	1
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
http://localhost/t...ganizacniJednotka	26210

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