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  • An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membrane is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between %22on%22 and %22off%22 state of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach that can be exploited for deposition of other ionic conductors for novel types of memories.
  • An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membrane is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between %22on%22 and %22off%22 state of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach that can be exploited for deposition of other ionic conductors for novel types of memories. (en)
Title
  • Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes
  • Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes (en)
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  • Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes
  • Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes (en)
skos:notation
  • RIV/00216275:25310/14:39898961!RIV15-MSM-25310___
http://linked.open...avai/riv/aktivita
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  • P(EE2.3.20.0254)
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  • 2
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  • 12324
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  • RIV/00216275:25310/14:39898961
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  • AAO; anodic aluminium oxide; nanoscale; resistive switching (en)
http://linked.open.../riv/klicoveSlovo
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [0533B6B7910F]
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  • Journal of Materials Chemistry C
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  • 2
http://linked.open...iv/tvurceVysledku
  • Macák, Jan
  • Wágner, Tomáš
  • Kolář, Jakub
  • Terabe, Kazuya
http://linked.open...ain/vavai/riv/wos
  • 000329068000017
issn
  • 2050-7526
number of pages
http://bibframe.org/vocab/doi
  • 10.1039/c3tc31969e
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  • 25310
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