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Description
| - Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+.
- Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+. (en)
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Title
| - Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors
- Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors (en)
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skos:prefLabel
| - Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors
- Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors (en)
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skos:notation
| - RIV/00216275:25310/14:39898459!RIV15-MSM-25310___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216275:25310/14:39898459
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - METAL; BI2TE3; TRANSITION; RESISTIVITY; SRRUO3; TRANSPORT; SINGLE-CRYSTALS; OPTICAL-PROPERTIES; FERROMAGNETIC SEMICONDUCTORS (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Lošťák, Petr
- Uher, C.
- Crandles, D.A
- Madubuonu, A.
- Manson, J.
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1103/PhysRevB.90.205205
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http://localhost/t...ganizacniJednotka
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