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  • Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+.
  • Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+. (en)
Title
  • Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors
  • Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors (en)
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  • Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors
  • Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors (en)
skos:notation
  • RIV/00216275:25310/14:39898459!RIV15-MSM-25310___
http://linked.open...avai/riv/aktivita
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  • 21825
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  • RIV/00216275:25310/14:39898459
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  • METAL; BI2TE3; TRANSITION; RESISTIVITY; SRRUO3; TRANSPORT; SINGLE-CRYSTALS; OPTICAL-PROPERTIES; FERROMAGNETIC SEMICONDUCTORS (en)
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  • US - Spojené státy americké
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  • [68E3FA7466F6]
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  • Physical Review B
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  • 90
http://linked.open...iv/tvurceVysledku
  • Lošťák, Petr
  • Uher, C.
  • Crandles, D.A
  • Madubuonu, A.
  • Manson, J.
http://linked.open...ain/vavai/riv/wos
  • 000344409800003
issn
  • 1098-0121
number of pages
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  • 10.1103/PhysRevB.90.205205
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  • 25310
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