About: Defects in Bi(2)Te(3-x)Se(x) single crystals

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones. Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones. (en)
Title	Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals (en)
skos:prefLabel	Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals (en)
skos:notation	RIV/00216275:25310/10:39881705!RIV11-MSM-25310___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021627501)
http://linked.open...iv/cisloPeriodika	3
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Krejčová, Anna Drašar, Čestmír Beneš, Ludvík Lošťák, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Pardubice / Fakulta chemicko-technologická
http://linked.open...dnocenehoVysledku	253099
http://linked.open...ai/riv/idVysledku	RIV/00216275:25310/10:39881705
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	structural defects; electrical conductivity; Hall coefficient; crystals of tetradymite structure (en)
http://linked.open.../riv/klicoveSlovo	Hall coefficient electrical conductivity structural defects crystals of tetradymite structure
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[88FD7E5538EA]
http://linked.open...i/riv/nazevZdroje	Radiation Effects and Defects in Solids
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	165
http://linked.open...iv/tvurceVysledku	Krejčová, Anna Drašar, Čestmír Beneš, Ludvík Lošťák, Petr Bachan, David
http://linked.open...ain/vavai/riv/wos	000275126400003
http://linked.open...n/vavai/riv/zamer	Aimed preparation of special compounds and materials and investigation of their physical and chemical properties and supramolecular structures
issn	1042-0150
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	25310
is http://linked.open...avai/riv/vysledek of	Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals

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