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  • Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.
  • Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs. (en)
  • Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs. (cs)
Title
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3 (en)
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3 (cs)
skos:prefLabel
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3 (en)
  • DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3 (cs)
skos:notation
  • RIV/00216275:25310/06:00004426!RIV08-MSM-25310___
http://linked.open.../vavai/riv/strany
  • 252
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  • 471764
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  • RIV/00216275:25310/06:00004426
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  • DILUTED MAGNETIC SEMICONDUCTORS transport and magnetic properties (en)
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  • [F06FA7375638]
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  • Dresden
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  • Dresden
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  • 21st General Conference of the EPS Condensed Matter Division
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  • Drašar, Čestmír
  • Lošťák, Petr
  • Uher, Ctirad
  • Zhou, Z.
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  • Deutschen Physikalischen Gesellschaft
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  • 2-914771-32-0
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  • 25310
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