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rdf:type
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Description
| - N (cs)
- Beta-FeSi2?TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650 K. The influence of an additional phase, -FeSi, formed during the hot pressing, on the thermoelectric properties of the -FeSi2?TiB2 composites was also discussed.
- Beta-FeSi2?TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650 K. The influence of an additional phase, -FeSi, formed during the hot pressing, on the thermoelectric properties of the -FeSi2?TiB2 composites was also discussed. (en)
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Title
| - . (cs)
- The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors
- The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors (en)
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skos:prefLabel
| - . (cs)
- The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors
- The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors (en)
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skos:notation
| - RIV/00216275:25310/04:00001333!RIV08-MSM-25310___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216275:25310/04:00001333
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - semiconductors; electronic transport; thermoelectric properties (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Solid State Communications
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Drašar, Čestmír
- Müller, E.
- Stiewe, C.
- Cai, K.
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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