About: Metrology of epitaxial layers *GaN

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Utilization of characterization methods for development of Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial Al/GaN layers. Utilization of characterization methods for development of Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial Al/GaN layers. (en)
Title	Metrology of epitaxial layers GaN Metrology of epitaxial layers GaN (en)
skos:prefLabel	Metrology of epitaxial layers GaN Metrology of epitaxial layers GaN (en)
skos:notation	RIV/00216224:14740/14:00079942!RIV15-MSM-14740___
http://linked.open...avai/riv/aktivita	N
http://linked.open...avai/riv/aktivity	N
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Münz, Filip Humlíček, Josef Caha, Ondřej Wang, Chennan
http://linked.open.../riv/druhVysledku	V/S - Souhrnná výzkumná zpráva
http://linked.open...iv/duvernostUdaju	C - Předmět podléhá obchodnímu tajemství (§17 až 20 Obchodního zákoníku), ale některé údaje jsou upraveny tak, aby byly zveřejnitelné
http://linked.open...titaPredkladatele	Masarykova univerzita / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	29025
http://linked.open...ai/riv/idVysledku	RIV/00216224:14740/14:00079942
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	layered structures; GaN; AlGaN; silicon (en)
http://linked.open.../riv/klicoveSlovo	layered structures silicon GaN AlGaN
http://linked.open...ontrolniKodProRIV	[9CB2F8BAA38A]
http://linked.open...i/riv/mistoVydani	Masarykova univerzita, Brno
http://linked.open...telVyzkumneZpravy	ONSEMI
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2014
http://linked.open...iv/tvurceVysledku	Münz, Filip Caha, Ondřej Humlíček, Josef Wang, Chennan
http://linked.open...rzeVyzkumneZpravy	Report LDDA 2014
number of pages	67 (xsd:int)
http://localhost/t...ganizacniJednotka	14740

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