About: Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy     Goto   Sponge   NotDistinct   Permalink

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  • The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced.
  • The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. (en)
Title
  • Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy
  • Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy (en)
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  • Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy
  • Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy (en)
skos:notation
  • RIV/00216224:14740/14:00079372!RIV15-MSM-14740___
http://linked.open...avai/riv/aktivita
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  • I, P(GA14-08124S)
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  • December
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  • 47895
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  • RIV/00216224:14740/14:00079372
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  • X-RAY-DIFFRACTION; SINGLE DIRAC CONE; SURFACE-STATES; BI2TE3 FILMS; THIN-FILMS; PHASES; SYSTEM; BITE; SI (en)
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  • US - Spojené státy americké
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  • [BF70F91E527B]
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  • Journal of Applied Crystallography
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  • 47
http://linked.open...iv/tvurceVysledku
  • Caha, Ondřej
  • Holý, Václav
  • Springholz, Günter
  • Steiner, Hubert
  • Bauer, Guenther
  • Volobuev, Valentine
http://linked.open...ain/vavai/riv/wos
  • 000345877900010
issn
  • 0021-8898
number of pages
http://bibframe.org/vocab/doi
  • 10.1107/S1600576714020445
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  • 14740
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