About: Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We have investigated Czochralski grown low boron doped silicon wafers after oxygen precipitation using high temperature preannealing. Wafers originating from the part of the silicon ingot close to head and close to tail were used for the experiments representing different temperature history of the wafers. The loss of interstitial oxygen, precipitate morphology and stoichiometry at various stages of precipitation were determined by infrared absorption spectroscopy at liquid nitrogen and at room temperature. The impact of a high temperature preannealing at various temperatures on the parameters of precipitates including also their concentration determined from chemical etching was observed during the growth of oxygen precipitates. The obtained results were compared with transmission electron microscopy. We have investigated Czochralski grown low boron doped silicon wafers after oxygen precipitation using high temperature preannealing. Wafers originating from the part of the silicon ingot close to head and close to tail were used for the experiments representing different temperature history of the wafers. The loss of interstitial oxygen, precipitate morphology and stoichiometry at various stages of precipitation were determined by infrared absorption spectroscopy at liquid nitrogen and at room temperature. The impact of a high temperature preannealing at various temperatures on the parameters of precipitates including also their concentration determined from chemical etching was observed during the growth of oxygen precipitates. The obtained results were compared with transmission electron microscopy. (en)
Title	Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers (en)
skos:prefLabel	Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers (en)
skos:notation	RIV/00216224:14740/12:00065986!RIV14-MSM-14740___
http://linked.open...avai/predkladatel	Středoevropský technologický institut
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(GA202/09/1013), Z(AV0Z20410507), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Caha, Ondřej Meduňa, Mojmír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	172035
http://linked.open...ai/riv/idVysledku	RIV/00216224:14740/12:00065986
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	impurities; point defects; precipitates (en)
http://linked.open.../riv/klicoveSlovo	impurities point defects precipitates
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[D2F962835C0C]
http://linked.open...i/riv/nazevZdroje	Journal of crystal growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Nucleation and growth of oxygen precipitates in silicon
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	348
http://linked.open...iv/tvurceVysledku	Buršík, Jiří Caha, Ondřej Meduňa, Mojmír
http://linked.open...ain/vavai/riv/wos	000303937900010
http://linked.open...n/vavai/riv/zamer	Physical properties of advanced materials in relation to their microstructure and processing Physical and chemical properties of advanced materials and structures
issn	0022-0248
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.jcrysgro.2012.03.048
http://localhost/t...ganizacniJednotka	14740

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