About: Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods

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About: Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://ac.els-cdn.com/S0921452611008167/1-s2.0-S0921452611008167-main.pdf?_tid=a8f910ba-bef8-11e3-ae40-00000aacb35e&acdnat=1396946274_3147665ce89a86731eb6f8a7881fb548
Description	We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction cuvers we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO2 precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images. We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction cuvers we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO2 precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images. (en)
Title	Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods (en)
skos:prefLabel	Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods (en)
skos:notation	RIV/00216224:14740/12:00065985!RIV14-MSM-14740___
http://linked.open...avai/predkladatel	Středoevropský technologický institut
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(GA202/09/1013), P(GP202/09/P410), Z(AV0Z20410507), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	15
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Caha, Ondřej Meduňa, Mojmír Růžička, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	160937
http://linked.open...ai/riv/idVysledku	RIV/00216224:14740/12:00065985
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon; interstitial oxygen; precipitation (en)
http://linked.open.../riv/klicoveSlovo	silicon precipitation interstitial oxygen
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[1B4C83C81B38]
http://linked.open...i/riv/nazevZdroje	Physica B condensed matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Strain engineering in diluted magnetic semiconductors Central european institute of technology Nucleation and growth of oxygen precipitates in silicon
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	407
http://linked.open...iv/tvurceVysledku	Buršík, Jiří Růžička, Jiří Svoboda, Milan Caha, Ondřej Meduňa, Mojmír
http://linked.open...ain/vavai/riv/wos	000305790800047
http://linked.open...n/vavai/riv/zamer	Physical properties of advanced materials in relation to their microstructure and processing Physical and chemical properties of advanced materials and structures
issn	0921-4526
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.physb.2011.08.063
http://localhost/t...ganizacniJednotka	14740

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