About: ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques. The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques. (en)
Title	ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS (en)
skos:prefLabel	ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS (en)
skos:notation	RIV/00216224:14740/11:00057585!RIV13-GA0-14740___
http://linked.open...avai/predkladatel	Středoevropský technologický institut
http://linked.open...avai/riv/aktivita	I P S Z
http://linked.open...avai/riv/aktivity	I, P(GA202/09/0676), S, Z(MSM0021622410)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Munzar, Dominik Humlíček, Josef Klenovský, Petr
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	197121
http://linked.open...ai/riv/idVysledku	RIV/00216224:14740/11:00057585
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	quantum dots; GaAs; InAs; GaAsSb (en)
http://linked.open.../riv/klicoveSlovo	GaAs GaAsSb InAs quantum dots
http://linked.open...ontrolniKodProRIV	[9434A22E80FE]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	SLEZSKA
http://linked.open...i/riv/nazevZdroje	3rd International Conference on NANOCON
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Impact of capping layers on electronic states in quantum dots
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Humlíček, Josef Klenovský, Petr Munzar, Dominik
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open...ain/vavai/riv/wos	000306686700005
http://linked.open.../riv/zahajeniAkce	2011-01-01 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Physical and chemical properties of advanced materials and structures
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	TANGER LTD
https://schema.org/isbn	9788087294277
http://localhost/t...ganizacniJednotka	14740
is http://linked.open...avai/riv/vysledek of	ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS

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