About: Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen

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About: Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://ac.els-cdn.com/S0040609014003514/1-s2.0-S0040609014003514-main.pdf?_tid=0ab31e60-cd51-11e4-974b-00000aacb361&acdnat=1426671048_33720b9a5f3421f518aa642d5757ebfa
Description	The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. (C) 2014 Elsevier B.V. All rights reserved. The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. (C) 2014 Elsevier B.V. All rights reserved. (en)
Title	Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen (en)
skos:prefLabel	Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen (en)
skos:notation	RIV/00216224:14310/14:00079590!RIV15-MSM-14310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(ED2.1.00/03.0086)
http://linked.open...iv/cisloPeriodika	november
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Ohlídal, Ivan Zajíčková, Lenka Nečas, David Franta, Daniel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	52652
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/14:00079590
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Dispersion model; Sum rule; Transition strength; Crystalline silicon (en)
http://linked.open.../riv/klicoveSlovo	Dispersion model Sum rule Crystalline silicon Transition strength
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[710D4D4C101F]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Regional R&D center for low-cost plasma and nanotechnology surface modifications
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	571
http://linked.open...iv/tvurceVysledku	Franta, Daniel Nečas, David Ohlídal, Ivan Zajíčková, Lenka
http://linked.open...ain/vavai/riv/wos	000346055200027
issn	0040-6090
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.tsf.2014.03.059
http://localhost/t...ganizacniJednotka	14310

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