About: InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy. Stronger red shift of QD emission was achieved with InGaAs SRL as compared to GaAsSb one with similar strain in the structure. This can be caused by the increase of QD size during InGaAs SRL growth. The heterojunction between InAs QDs and GaAsSb SRL changes from type I to type II between 13% and 15% of Sb in the SRL. Important advantage of GaAsSb SRL can be the possibility to change the overlap of electron and hole wave functions and QD dipole moment orientation by the composition of GaAsSb. We have achieved the highest PL intensity suggesting best wave function overlap near 13% of Sb in the SRL. Band alignment, transition probability and transition energy were calculated to help the interpretation of achieved results. We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy. Stronger red shift of QD emission was achieved with InGaAs SRL as compared to GaAsSb one with similar strain in the structure. This can be caused by the increase of QD size during InGaAs SRL growth. The heterojunction between InAs QDs and GaAsSb SRL changes from type I to type II between 13% and 15% of Sb in the SRL. Important advantage of GaAsSb SRL can be the possibility to change the overlap of electron and hole wave functions and QD dipole moment orientation by the composition of GaAsSb. We have achieved the highest PL intensity suggesting best wave function overlap near 13% of Sb in the SRL. Band alignment, transition probability and transition energy were calculated to help the interpretation of achieved results. (en)
Title	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots (en)
skos:prefLabel	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots (en)
skos:notation	RIV/00216224:14310/10:00048777!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), P(IAA100100719), P(LC510), Z(AV0Z10100521), Z(MSM6840770014)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Caha, Ondřej
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	263989
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/10:00048777
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Low dimensional structures; Photoluminescence; Low-pressure Metalorganic vapor phase epitaxy; InAs/GaAs Quantum dots; Semiconducting III-V materials (en)
http://linked.open.../riv/klicoveSlovo	Photoluminescence InAs/GaAs Quantum dots Low dimensional structures Low-pressure Metalorganic vapor phase epitaxy Semiconducting III-V materials
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[49C287F78CB6]
http://linked.open...i/riv/nazevZdroje	Journal of crystal growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Impact of capping layers on electronic states in quantum dots Controlled quantum dot MOVPE growth
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	312
http://linked.open...iv/tvurceVysledku	Caha, Ondřej Hazdra, P. Vyskočil, J. Oswald, J. Hospodková, A. Pangrác, J. Hulicius, E. Kuldová, K. Šimeček, T.
http://linked.open...ain/vavai/riv/wos	000277039100069
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Výzkum perspektivních informačních a komunikačních technologií
issn	0022-0248
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	14310
is http://linked.open...avai/riv/vysledek of	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

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