About: Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy. We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy. (en)
Title	Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer (en)
skos:prefLabel	Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer (en)
skos:notation	RIV/00216224:14310/10:00045417!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), S, Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	012086
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Křápek, Vlastimil Munzar, Dominik Humlíček, Josef Klenovský, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	271948
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/10:00045417
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Quantum Dots; Semiconductor Compounds; Mechanical properties of nanoscale systems (en)
http://linked.open.../riv/klicoveSlovo	Mechanical properties of nanoscale systems Semiconductor Compounds Quantum Dots
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[1CAB2107A2E9]
http://linked.open...i/riv/nazevZdroje	Journal of Physics: Conference Series
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Impact of capping layers on electronic states in quantum dots
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	244
http://linked.open...iv/tvurceVysledku	Křápek, Vlastimil Humlíček, Josef Klenovský, Petr Munzar, Dominik
http://linked.open...n/vavai/riv/zamer	Physical and chemical properties of advanced materials and structures
issn	1742-6588
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	14310
is http://linked.open...avai/riv/vysledek of	Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer

Faceted Search & Find service v1.16.116 as of Feb 22 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3239 as of Feb 22 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 67 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software