About: Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer     Goto   Sponge   NotDistinct   Permalink

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  • We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy.
  • We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy. (en)
Title
  • Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
  • Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer (en)
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  • Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
  • Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer (en)
skos:notation
  • RIV/00216224:14310/10:00045417!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/09/0676), S, Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika
  • 012086
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
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  • 271948
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/10:00045417
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Quantum Dots; Semiconductor Compounds; Mechanical properties of nanoscale systems (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [1CAB2107A2E9]
http://linked.open...i/riv/nazevZdroje
  • Journal of Physics: Conference Series
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 244
http://linked.open...iv/tvurceVysledku
  • Křápek, Vlastimil
  • Humlíček, Josef
  • Klenovský, Petr
  • Munzar, Dominik
http://linked.open...n/vavai/riv/zamer
issn
  • 1742-6588
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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