About: Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field. The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field. (en)
Title	Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties (en)
skos:prefLabel	Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties (en)
skos:notation	RIV/00216224:14310/10:00045413!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), S, Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	203107
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Munzar, Dominik Humlíček, Josef Klenovský, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	256787
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/10:00045413
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots (en)
http://linked.open.../riv/klicoveSlovo	gallium compounds indium compounds k.p calculations semiconductor quantum dots band structure photoluminescence gallium arsenide red shift III-V semiconductors
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[CC8FF52C8744]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Impact of capping layers on electronic states in quantum dots
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	97
http://linked.open...iv/tvurceVysledku	Křápek, Vlastimil Humlíček, Josef Klenovský, Petr Munzar, Dominik
http://linked.open...ain/vavai/riv/wos	000284545200055
http://linked.open...n/vavai/riv/zamer	Physical and chemical properties of advanced materials and structures
issn	0003-6951
number of pages	3 (xsd:int)
http://localhost/t...ganizacniJednotka	14310
is http://linked.open...avai/riv/vysledek of	Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

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